2N7002E-T1-E3, 60V 240mA 3Ohm@10V,250mA 350mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070120860
- Артикул
- 2N7002E-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Series:
- 2N7002E
- Вес, г
- 0.04
- Technology:
- Si
Цена по запросу
(от 220 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Series: | 2N7002E |
| Вес, г | 0.04 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 2N7002E-E3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 600 pC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 350 mW |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 13 ns |
| Typical Turn-Off Delay Time: | 18 ns |
| Id - Continuous Drain Current: | 240 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 600 mS |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |