2N7002DWQ-7-F, Trans MOSFET N-CH 60V 0.23A Automotive AEC-Q101 6-Pin SOT-363 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002217920
- Артикул
- 2N7002DWQ-7-F
- Бренд
- DIODES INC.
- PPAP
- Yes
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
- Series:
- 2N7002DW
Цена по запросу
(от 12 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 0.23A Автомобильный 6-контактный SOT-363 T/R
Технические параметры
| PPAP | Yes |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | 2N7002DW |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Корпус | SOT-363 |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Product Category | Small Signal |
| Supplier Package | SOT-363 |
| Transistor Type: | 2 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Особенности | автомобильные приложения |
| Pd - Power Dissipation: | 400 mW |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 7 ns |
| Typical Turn-Off Delay Time: | 11 ns |
| Id - Continuous Drain Current: | 230 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 400 |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 80 mS |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 11 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 11 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Rds On - Drain-Source Resistance: | 7.5 Ohms |
| Typical Diode Forward Voltage (V) | 0.78 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.23 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 22@25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 7500@5V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 10 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.8 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.4 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2@25V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.23 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 318 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.23 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.31 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |