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2N7002DWH6327XTSA1, Транзистор: N-MOSFET, полевой, 60В, 0,3А, 0,5Вт, PG-SOT-363

2N7002DWH6327XTSA1, Транзистор: N-MOSFET, полевой, 60В, 0,3А, 0,5Вт, PG-SOT-363

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Код товара
8070052722
Артикул
2N7002DWH6327XTSA1
Бренд
INFINEON TECHNOLOGIES AG.
Case
PG-SOT-363
ECCN
EAR99
RoHS
Details
Brand
Infineon Technologies
Цена по запросу
(от 25,30 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

МАЛОСИГНАЛЬНЫЙ ПОЛЕВОЙ ТРАНЗИСТОР, 0,3 А I(D), 60 В, 2-ЭЛЕМЕНТНЫЙ, N-КАНАЛЬНЫЙ, КРЕМНИЕВЫЙ, МЕТАЛЛ-ОКСИДНЫЙ ПОЛУПРОВОДНИКОВЫЙ ПОЛЕВОЙ ТРАНЗИСТОР (Также известный как: 2N7002DW)

Технические параметры

CasePG-SOT-363
ECCNEAR99
RoHSDetails
BrandInfineon Technologies
HTSUS8541.21.0095
Width1.25 mm
Height0.9 mm
Length2 mm
SeriesOptiMOSв„ў ->
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
FET Type2 N-Channel (Dual)
MountingSMD
Fall Time3.1 ns, 3.1 ns
PackagingReel
Rise Time3.3 ns, 3.3 ns
TechnologySi
Вес, г0.02
FET FeatureLogic Level Gate
No. of Pins6; SVHC
Power - Max500mW
RoHS StatusROHS3 Compliant
Channel ModeEnhancement
ManufacturerInfineon
Polarisationunipolar
REACH StatusREACH Unaffected
ConfigurationDual
Drain current0.3A
Mounting TypeSurface Mount
Mounting StyleSMD/SMT
Package / Case6-VSSOP, SC-88, SOT-363
Part # Aliases2N7002DW 2N7002DWH6327XT H6327 SP000917596
Kind of channelenhanced
Transistor Type2 N-Channel
Product CategoryMOSFET
Qg - Gate Charge600 pC, 600 pC
Power dissipation0.5W
Number of Channels2 Channel
Type of transistorN-MOSFET x2
Vgs(th) (Max) @ Id2.5V @ 250ВµA
Base Product Number2N7002 ->
Gate-source voltage±20V
On-state resistance4Ω
Transistor PolarityN-Channel
Drain-source voltage60V
Factory Pack Quantity15000
Operating Temperature-55В°C ~ 150В°C (TJ)
Pd - Power Dissipation500 mW(1/2 W)
Rds On (Max) @ Id, Vgs3Ohm @ 500mA, 10V
Supplier Device PackagePG-SOT363-6
Vgs - Gate-Source Voltage20 V, 20 V
Typical Turn-On Delay Time3 ns, 3 ns
Typical Turn-Off Delay Time5.5 ns, 5.5 ns
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 10V
Id - Continuous Drain Current300 mA, 300 mA
Maximum Operating Temperature+150 C
Minimum Operating Temperature-55 C
Drain to Source Voltage (Vdss)60V
Forward Transconductance - Min200 mS, 200 mS
Moisture Sensitivity Level (MSL)1 (Unlimited)
Rds On - Drain-Source Resistance1.6 Ohms, 1.6 Ohms
Input Capacitance (Ciss) (Max) @ Vds20pF @ 25V
Vds - Drain-Source Breakdown Voltage60 V, 60 V
Vgs th - Gate-Source Threshold Voltage1.5 V, 1.5 V
Current - Continuous Drain (Id) @ 25В°C300mA

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