2N7002DWH6327XTSA1, Транзистор: N-MOSFET, полевой, 60В, 0,3А, 0,5Вт, PG-SOT-363

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070052722
- Артикул
- 2N7002DWH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Case
- PG-SOT-363
- ECCN
- EAR99
- RoHS
- Details
- Brand
- Infineon Technologies
Цена по запросу
(от 25,30 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МАЛОСИГНАЛЬНЫЙ ПОЛЕВОЙ ТРАНЗИСТОР, 0,3 А I(D), 60 В, 2-ЭЛЕМЕНТНЫЙ, N-КАНАЛЬНЫЙ, КРЕМНИЕВЫЙ, МЕТАЛЛ-ОКСИДНЫЙ ПОЛУПРОВОДНИКОВЫЙ ПОЛЕВОЙ ТРАНЗИСТОР (Также известный как: 2N7002DW)
Технические параметры
| Case | PG-SOT-363 |
| ECCN | EAR99 |
| RoHS | Details |
| Brand | Infineon Technologies |
| HTSUS | 8541.21.0095 |
| Width | 1.25 mm |
| Height | 0.9 mm |
| Length | 2 mm |
| Series | OptiMOSв„ў -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | 2 N-Channel (Dual) |
| Mounting | SMD |
| Fall Time | 3.1 ns, 3.1 ns |
| Packaging | Reel |
| Rise Time | 3.3 ns, 3.3 ns |
| Technology | Si |
| Вес, г | 0.02 |
| FET Feature | Logic Level Gate |
| No. of Pins | 6; SVHC |
| Power - Max | 500mW |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Manufacturer | Infineon |
| Polarisation | unipolar |
| REACH Status | REACH Unaffected |
| Configuration | Dual |
| Drain current | 0.3A |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Part # Aliases | 2N7002DW 2N7002DWH6327XT H6327 SP000917596 |
| Kind of channel | enhanced |
| Transistor Type | 2 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 600 pC, 600 pC |
| Power dissipation | 0.5W |
| Number of Channels | 2 Channel |
| Type of transistor | N-MOSFET x2 |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Base Product Number | 2N7002 -> |
| Gate-source voltage | ±20V |
| On-state resistance | 4Ω |
| Transistor Polarity | N-Channel |
| Drain-source voltage | 60V |
| Factory Pack Quantity | 15000 |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Supplier Device Package | PG-SOT363-6 |
| Vgs - Gate-Source Voltage | 20 V, 20 V |
| Typical Turn-On Delay Time | 3 ns, 3 ns |
| Typical Turn-Off Delay Time | 5.5 ns, 5.5 ns |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 10V |
| Id - Continuous Drain Current | 300 mA, 300 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Drain to Source Voltage (Vdss) | 60V |
| Forward Transconductance - Min | 200 mS, 200 mS |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 1.6 Ohms, 1.6 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
| Vds - Drain-Source Breakdown Voltage | 60 V, 60 V |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V, 1.5 V |
| Current - Continuous Drain (Id) @ 25В°C | 300mA |