2N7002DW-7-F, Транзистор N-MOSFET x2, полевой, 60В, 0,14А, 120мВт, SOT363
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- Код товара
- 8070284511
- Артикул
- 2N7002DW-7-F
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- Enhancement Mode Field Effect Transistor
- Brand
- Diodes Incorporated
- Width
- 1.35mm
Цена по запросу
(от 27,16 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET x2, полевой, 60В, 0,14А, 120мВт, SOT363 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Type | Enhancement Mode Field Effect Transistor |
| Brand | Diodes Incorporated |
| Width | 1.35mm |
| Series | 2N7002DW |
| EU RoHS | Compliant |
| Product | MOSFET Small Signal |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape or Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.02 |
| PCB changed | 6 |
| Part Status | Active |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-363 |
| Product Type | MOSFET |
| Configuration | Dual |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 |
| Transistor Type | 2 N-Channel |
| Product Category | MOSFET |
| Supplier Package | SOT-363 |
| Maximum IDSS (uA) | 1 |
| Number Of Channels | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 0.4 W |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 200 mW |
| Vgs - Gate-Source Voltage | 5 V |
| Supplier Temperature Grade | Commercial |
| Typical Turn-On Delay Time | 7 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-Off Delay Time | 11 ns |
| Maximum Drain Source Voltage | 60 V |
| Id - Continuous Drain Current | 230 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 80 mS |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation (mW) | 400 |
| Maximum Drain Source Resistance | 13.5 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 11 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Continuous Drain Current | 115 mA |
| Maximum Drain Source Voltage (V) | 60 |
| Rds On - Drain-Source Resistance | 7.5 Ohms |
| Typical Turn-Off Delay Time (ns) | 11 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Typical Diode Forward Voltage (V) | 0.78 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.23 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 22@25V |
| Vds - Drain-Source Breakdown Voltage | 70 V |
| Maximum Drain Source Resistance (mOhm) | 7500@5V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Maximum Gate Source Leakage Current (nA) | 10 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.8 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.4 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2@25V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.23 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 318 |