2N7002-7-F, Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001483687
- Артикул
- 2N7002-7-F
- Бренд
- DIODES INC.
- Type:
- Enhancement Mode Field Effect Transistor
- Width
- 1.4mm
- Brand:
- Diodes Incorporated
- Series:
- 2N7002
Цена по запросу
(от 5,50 ₽)
Минимальный заказ: 6000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 60В, 115мА, 300мВт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | Enhancement Mode Field Effect Transistor |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Series: | 2N7002 |
| Product: | MOSFET Small Signal |
| Pin Count | 3 |
| Fall Time: | 5.6 ns |
| Rise Time: | 3 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 223 pC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N Channel |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 540 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 mW |
| Vgs - Gate-Source Voltage | 2.5V @ 250uA |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 2.8 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 7.6 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 210 mA |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 80 mS |
| Maximum Drain Source Resistance | 13.5 Ω |
| Maximum Continuous Drain Current | 115 mA |
| Rds On - Drain-Source Resistance | 7.5О© @ 50mA,5V |
| Rds On - Drain-Source Resistance: | 5 Ohms |
| Power Dissipation-Max (Ta=25В°C) | 370mW |
| Vds - Drain-Source Breakdown Voltage | 60V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Continuous Drain Current (Id) @ 25В°C | 115mA |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Крутизна характеристики, S | - |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.21 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.35 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |