2N6190, Bipolar Transistors - BJT Power BJT
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- Код товара
- 8012144748
- Артикул
- 2N6190
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Вес, г
- 0.7
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 4 020 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Microchip Technology |
| Вес, г | 0.7 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Microchip |
| Package/Case: | TO-39 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | PNP |
| Factory Pack Quantity: | 1 |
| Pd - Power Dissipation: | 10 W |
| DC Current Gain hFE Max: | 120 |
| Gain Bandwidth Product fT: | 30 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | 5 A |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 30 |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 1.2 V |