2N5551TFR, Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
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- Код товара
- 8002305548
- Артикул
- 2N5551TFR
- Бренд
- ON Semiconductor***
- Case
- TO92
- PPAP
- No
- Type
- NPN
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 9,80 ₽)
Минимальный заказ: 4000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 160V 0.6A 625 МВт 3-контактный TO-92 T/R
Технические параметры
| Case | TO92 |
| PPAP | No |
| Type | NPN |
| Brand: | onsemi/Fairchild |
| EU RoHS | Compliant |
| Series: | 2N5551 |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Frequency | 100MHz |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Reel, Cut Tape |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Current gain | 30…250 |
| Manufacturer | ONSEMI |
| Polarisation | bipolar |
| Subcategory: | Transistors |
| Корпус | TO-92 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Kind of package | reel, tape |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 Kinked Lead |
| Part # Aliases: | 2N5551TFR_NL |
| Product Category | Bipolar Small Signal |
| Supplier Package | TO-92 |
| Collector current | 0.6A |
| Power dissipation | 0.625W |
| Product Category: | Bipolar Transistors-BJT |
| Type of transistor | NPN |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | TO-92 |
| Minimum DC Current Gain | 80 1mA 5V|80 10mA 5V|30 50mA 5V |
| Pd - Power Dissipation: | 625 mW |
| DC Current Gain hFE Max: | 250 |
| Collector-emitter voltage | 160V |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 180 V |
| Continuous Collector Current: | 600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 625 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 80 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 180 |
| Maximum Transition Frequency (MHz) | 300 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 160 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Maximum Collector-Emitter Voltage (V) | 160 |
| Maximum Base Emitter Saturation Voltage (V) | 1 1mA 10mA|1 5mA 50mA |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15 1mA 10mA|0.2 5mA 50mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.6 |