2N5551RL1G, Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
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- Код товара
- 8001229057
- Артикул
- 2N5551RL1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- Material
- Si
- Mounting
- Through Hole
Цена по запросу
(от 21 ₽)
Минимальный заказ: 3912 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 160V 0.6A 625 МВт 3-контактный TO-92 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Корпус | TO-92 |
| Configuration | Single |
| Package Width | 4.19(Max)mm |
| Package Length | 5.2(Max)mm |
| Product Category | Bipolar Small Signal |
| Supplier Package | TO-92 |
| Структура | npn |
| Standard Package Name | TO |
| Minimum DC Current Gain | 80@1mA@5V|80@10mA@5V|30@50mA@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 625 |
| Maximum Base-Emitter Voltage (V) | 6 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Collector-Base Voltage (V) | 180 |
| Maximum Transition Frequency (MHz) | 300 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 160 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Base-Emitter Saturation Voltage (V) | 1@1mA@10mA|1@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15@1mA@10mA|0.2@5mA@50mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.6 |