2N5415, Bipolar Transistors - BJT Power BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004670864
- Артикул
- 2N5415
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Packaging:
- Bulk
- Вес, г
- 0.4
- Technology:
- Si
Цена по запросу
(от 3 270 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы - BJT Power BJT
Технические параметры
| Brand: | Microchip Technology |
| Packaging: | Bulk |
| Вес, г | 0.4 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Microchip |
| Package/Case: | TO-5-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | PNP |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 120 |
| Emitter- Base Voltage VEBO: | 4 V |
| Collector- Base Voltage VCBO: | 200 V |
| Continuous Collector Current: | 1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 15 |
| Collector- Emitter Voltage VCEO Max: | 200 V |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |