2N5401-F, Bipolar Transistors - BJT PNP 0.6A 150V Transistor
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006330546
- Артикул
- 2N5401-F
- Бренд
- Rectron Semiconductor
- Brand:
- Rectron
- Packaging:
- Ammo Pack
- Вес, г
- 0.73
- Technology:
- Si
Цена по запросу
(от 24,16 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Rectron |
| Packaging: | Ammo Pack |
| Вес, г | 0.73 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Rectron |
| Package/Case: | TO-92-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | 2N5401 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Factory Pack Quantity: | 2000 |
| Pd - Power Dissipation: | 625 mW |
| DC Current Gain hFE Max: | 300 |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 160 V |
| Continuous Collector Current: | -600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 50 |
| Collector- Emitter Voltage VCEO Max: | 150 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Максимально допустимый ток к ( Iк макс.А) | 0.6 |