2N5401 APP PBFREE, Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8018678951
- Артикул
- 2N5401 APP PBFREE
- Бренд
- Central Semiconductor Corp
- Brand:
- Central Semiconductor
- Packaging:
- Ammo Pack
- Вес, г
- 0.05
- Technology:
- Si
Цена по запросу
(от 83,22 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Central Semiconductor |
| Packaging: | Ammo Pack |
| Вес, г | 0.05 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Central Semiconductor |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Factory Pack Quantity: | 2000 |
| Pd - Power Dissipation: | 625 mW |
| DC Current Gain hFE Max: | 240 at 5 V, 10 mA |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 160 V |
| Continuous Collector Current: | 600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 40 at 10 V, 1 mA |
| Collector- Emitter Voltage VCEO Max: | 150 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Максимально допустимый ток к ( Iк макс.А) | 600 |