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2N5308 PBFREE, Darlington Transistors NPN Darl Amp

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Код товара
8005049590
Артикул
2N5308 PBFREE
Бренд
Central Semiconductor Corp
ECCN
EAR99
HTSUS
8541.21.0095
Brand:
Central Semiconductor
Package
Bulk
Цена по запросу
(от 154,97 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN - Darlington 40V 300mA 60 МГц 625 МВт со сквозным отверстием TO-92

Технические параметры

ECCNEAR99
HTSUS8541.21.0095
Brand:Central Semiconductor
PackageBulk
Series:2N53
Packaging:Bulk
Вес, г0.45
Power - Max625mW
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
Subcategory:Transistors
Manufacturer:Central Semiconductor
Mounting TypeThrough Hole
Product Type:Darlington Transistors
Configuration:Single
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting Style:Through Hole
Package / Case:TO-92-3
Transistor TypeNPN - Darlington
Product Category:Darlington Transistors
Структураnpn
Transistor Polarity:NPN
Operating Temperature-65В°C ~ 150В°C (TJ)
Frequency - Transition60MHz
Pd - Power Dissipation:625 mW
Supplier Device PackageTO-92
DC Current Gain hFE Max:70000 at 2 mA, 5 V
Gain Bandwidth Product fT:60 MHz
Emitter- Base Voltage VEBO:12 V
Collector- Base Voltage VCBO:40 V
Continuous Collector Current:300 mA
Vce Saturation (Max) @ Ib, Ic1.4V @ 200ВµA, 200mA
Current - Collector (Ic) (Max)300mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:7000 at 2 mA, 5 V
Current - Collector Cutoff (Max)100nA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:40 V
DC Current Gain (hFE) (Min) @ Ic, Vce7000 @ 2mA, 5V
Voltage - Collector Emitter Breakdown (Max)40V
Factory Pack Quantity: Factory Pack Quantity:2500

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