2N4912, Bipolar (BJT) Transistor PNP 80 V 4 A 25 W Through Hole TO-66 (TO-213AA)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064128887
- Артикул
- 2N4912
- Бренд
- Microchip Technology
- Tab
- Tab
- PPAP
- No
- Type
- NPN
- Material
- Si
Цена по запросу
(от 7 840 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 80V 4A 25000 МВт 3-контактный(2+Tab) TO-66
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| Material | Si |
| Mounting | Through Hole |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.05 |
| PCB changed | 2 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 17.78 |
| Package Length | 7.36+24.43(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-66 |
| Структура | pnp |
| Standard Package Name | TO |
| Minimum DC Current Gain | 20@0.5mA |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 25000 |
| Maximum Base-Emitter Voltage (V) | 5 |
| Maximum DC Collector Current (A) | 4 |
| Maximum Collector-Base Voltage (V) | 80 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 200 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Base-Emitter Saturation Voltage (V) | 1.3@0.1A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.6@0.1mA@0.5mA |