2N4150, Bipolar Transistors - BJT 70 V Power BJT
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- Код товара
- 8062593629
- Артикул
- 2N4150
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Packaging:
- Bulk
- Вес, г
- 4.68
- Technology:
- Si
Цена по запросу
(от 2 530 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Microchip Technology |
| Packaging: | Bulk |
| Вес, г | 4.68 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Microchip |
| Package/Case: | TO-5-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Factory Pack Quantity: | 1 |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 200 at 1 A, 5 VDC |
| Emitter- Base Voltage VEBO: | 10 V |
| Collector- Base Voltage VCBO: | 100 V |
| Maximum DC Collector Current: | 10 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 50 at 1 A, 5 VDC |
| Collector- Emitter Voltage VCEO Max: | 70 V |
| Collector-Emitter Saturation Voltage: | 600 mV |