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2N4036 PBFREE, Bipolar Transistors - BJT PNP Ampl/Switch

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Код товара
8005049549
Артикул
2N4036 PBFREE
Бренд
Central Semiconductor Corp
ECCN
EAR99
HTSUS
8541.29.0075
Brand:
Central Semiconductor
Package
Bulk
Цена по запросу
(от 286,35 ₽)

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Описание

Биполярный (BJT) транзистор PNP 65V 1A 60 МГц 1 Вт со сквозным отверстием TO-39

Технические параметры

ECCNEAR99
HTSUS8541.29.0075
Brand:Central Semiconductor
PackageBulk
Packaging:Bulk
Вес, г1.92
Power - Max1W
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
Subcategory:Transistors
Manufacturer:Central Semiconductor
Mounting TypeThrough Hole
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting Style:Through Hole
Package / Case:TO-39
Transistor TypePNP
Product Category:Bipolar Transistors-BJT
Структураpnp
Transistor Polarity:PNP
Operating Temperature-65В°C ~ 200В°C (TJ)
Frequency - Transition60MHz
Pd - Power Dissipation:1 W
Supplier Device PackageTO-39
DC Current Gain hFE Max:140
Gain Bandwidth Product fT:60 MHz
Emitter- Base Voltage VEBO:7 V
Collector- Base Voltage VCBO:90 V
Continuous Collector Current:1 A
Maximum DC Collector Current:1 A
Vce Saturation (Max) @ Ib, Ic650mV @ 15mA, 150mA
Current - Collector (Ic) (Max)1A
Maximum Operating Temperature:+200 C
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:40
Current - Collector Cutoff (Max)1ВµA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:65 V
Collector-Emitter Saturation Voltage:650 mV
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Voltage - Collector Emitter Breakdown (Max)65V
Factory Pack Quantity: Factory Pack Quantity:500

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