2N3906-G, Bipolar Transistors - BJT -40V -200mA TO-92
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- Код товара
- 8061917100
- Артикул
- 2N3906-G
- Бренд
- Comchip Technology
- Brand:
- Comchip Technology
- Packaging:
- Bulk
- Вес, г
- 0.46
- Technology:
- Si
Цена по запросу
(от 20,96 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Comchip Technology |
| Packaging: | Bulk |
| Вес, г | 0.46 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | TO-92 |
| Manufacturer: | Comchip Technology |
| Package/Case: | TO-92-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | PNP |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 625 mW |
| DC Current Gain hFE Max: | 400 |
| Gain Bandwidth Product fT: | 250 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 40 V |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 30 |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 400 mV |