2N3700UB, Bipolar Transistors - BJT 80V 1A 500mW Round-End Small-Signal BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004809128
- Артикул
- 2N3700UB
- Бренд
- Microchip Technology
- PPAP
- No
- Type
- NPN
- Material
- Si
- Mounting
- Surface Mount
Цена по запросу
(от 2 470 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 80V 1A 500 МВт 4-контактный корпус UB Waffle
Технические параметры
| PPAP | No |
| Type | NPN |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Waffle |
| Pin Count | 4 |
| Automotive | No |
| Вес, г | 1.4 |
| PCB changed | 4 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 2.74(Max) |
| Package Length | 3.25(Max) |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | Case UB |
| Collector Current (Ic) | 1A |
| Power Dissipation (Pd) | 500mW |
| Minimum DC Current Gain | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 50@500mA, 10V |
| Maximum Power Dissipation (mW) | 500 |
| Collector Cut-Off Current (Icbo) | 10nA |
| Maximum Base-Emitter Voltage (V) | 7 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Collector-Base Voltage (V) | 140 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Maximum Base-Emitter Saturation Voltage (V) | 1.1@15mA@150mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@15mA@150mA|0.5@50mA@500mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@500mA, 50mA |
| Максимально допустимый ток к ( Iк макс.А) | 1 |