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2N3250 PBFREE, Bipolar Transistors - BJT PNP Gen Pur SS

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Код товара
8005049505
Артикул
2N3250 PBFREE
Бренд
Central Semiconductor Corp
ECCN
EAR99
HTSUS
8541.21.0075
Brand:
Central Semiconductor
Package
Bulk
Цена по запросу
(от 238,08 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор PNP 40В 200мА 250 МГц 360 МВт Со сквозным отверстием TO-18

Технические параметры

ECCNEAR99
HTSUS8541.21.0075
Brand:Central Semiconductor
PackageBulk
Packaging:Bulk
Вес, г1
Power - Max360mW
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
Subcategory:Transistors
Manufacturer:Central Semiconductor
Mounting TypeThrough Hole
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting Style:Through Hole
Package / Case:TO-18-3
Transistor TypePNP
Product Category:Bipolar Transistors-BJT
Структураpnp
Transistor Polarity:PNP
Operating Temperature-65В°C ~ 200В°C (TJ)
Frequency - Transition250MHz
Pd - Power Dissipation:360 mW
Supplier Device PackageTO-18
Gain Bandwidth Product fT:250 MHz
Emitter- Base Voltage VEBO:5 V
Collector- Base Voltage VCBO:50 V
Maximum DC Collector Current:200 mA
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector (Ic) (Max)200mA
Maximum Operating Temperature:+200 C
Minimum Operating Temperature:-65 C
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:40 V
Collector-Emitter Saturation Voltage:500 mV
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 1V
Voltage - Collector Emitter Breakdown (Max)40V
Factory Pack Quantity: Factory Pack Quantity:2000