2N2907AUB, Bipolar Transistors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062281325
- Артикул
- 2N2907AUB
- Бренд
- Microchip Technology
- PPAP
- No
- Type
- PNP
- Brand:
- Microchip Technology
- EU RoHS
- Not Compliant
Цена по запросу
(от 1 060 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 60V 0.6A 500 МВт 4-контактный корпус UB Waffle
Технические параметры
| PPAP | No |
| Type | PNP |
| Brand: | Microchip Technology |
| EU RoHS | Not Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Waffle |
| Pin Count | 4 |
| Automotive | No |
| Packaging: | Waffle |
| Вес, г | 0.2 |
| PCB changed | 4 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Microchip |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SMD-3 |
| Transistor Type | PNP |
| Product Category | Bipolar Small Signal |
| Supplier Package | Case UB |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 600mA |
| Power Dissipation (Pd) | 500mW |
| Pd - Power Dissipation: | 500 mW |
| DC Current Gain hFE Max: | 450 |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 10V |
| Collector- Base Voltage VCBO: | 60 V |
| Continuous Collector Current: | 600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +200 C |
| Maximum Power Dissipation (mW) | 500 |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 50 |
| Collector Cut-Off Current (Icbo) | 50nA |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Maximum Base Emitter Saturation Voltage (V) | 1.3 15mA 150mA|2.6 50mA 500mA |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 15mA 150mA|1.6 50mA 500mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.6V@50mA, 500mA |