2N2222A, 50V 500mW 100@150mA,10V 800mA NPN TO-18 BIpolar TransIstors - BJT ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062340081
- Артикул
- 2N2222A
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Category
- Bipolar Power
- Mounting
- Through Hole
- Frequency
- 300(MHz)
Цена по запросу
(от 510 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор NPN кремниевый 40 В IC= 800 мА-18 Корпус с малым сигналом Коммутации общего назначения
Технические параметры
| Brand: | Microchip Technology |
| Category | Bipolar Power |
| Mounting | Through Hole |
| Frequency | 300(MHz) |
| Pin Count | 3 |
| Packaging: | Bulk |
| Вес, г | 0.38 |
| Technology: | Si |
| Output Power | Not Required(W) |
| Package Type | TO-18 |
| Rad Hardened | No |
| Subcategory: | Transistors |
| Корпус | TO-18/КТ-1-7 |
| Configuration | Single |
| Manufacturer: | Microchip |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| DC Current Gain | 35 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-18-3 |
| Power Dissipation | 0.5(W) |
| Product Category: | Bipolar Transistors-BJT |
| Number of Elements | 1 |
| Структура | npn |
| Transistor Polarity | NPN |
| Emitter-Base Voltage | 6(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | NPN |
| Collector Current (DC) | 0.8(A) |
| Collector-Base Voltage | 75(V) |
| Pd - Power Dissipation: | 500 mW |
| DC Current Gain hFE Max: | 325 at 1 mA, 10 VDC |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO: | 75 V |
| Continuous Collector Current: | 800 mA |
| Maximum DC Collector Current: | 800 mA |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 75 at 1 mA, 10 VDC |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |