2N2222 TIN/LEAD, Bipolar Transistors - BJT 60Vcbo 30Vceo 5.0V 800mA 500mW
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- Код товара
- 8018649563
- Артикул
- 2N2222 TIN/LEAD
- Бренд
- Central Semiconductor Corp
- Brand:
- Central Semiconductor
- Packaging:
- Bulk
- Вес, г
- 0.05
- Technology:
- Si
Цена по запросу
(от 315,61 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Central Semiconductor |
| Packaging: | Bulk |
| Вес, г | 0.05 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Central Semiconductor |
| Package/Case: | TO-18-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Factory Pack Quantity: | 2000 |
| Pd - Power Dissipation: | 500 mW |
| DC Current Gain hFE Max: | 300 at 150 mA, 10 V |
| Gain Bandwidth Product fT: | 250 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 60 V |
| Continuous Collector Current: | 800 mA |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 35 at 0.1 mA, 10 V |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 400 mV |