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2N1613 PBFREE, Bipolar Transistors - BJT NPN Gen Pur SS

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Код товара
8005049472
Артикул
2N1613 PBFREE
Бренд
Central Semiconductor Corp
ECCN
EAR99
HTSUS
8541.29.0075
Brand:
Central Semiconductor
Package
Bulk
Цена по запросу
(от 323 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 50 В 500 мА 60 МГц 3 Вт со сквозным отверстием TO-39

Технические параметры

ECCNEAR99
HTSUS8541.29.0075
Brand:Central Semiconductor
PackageBulk
Packaging:Bulk
Вес, г1.01
Power - Max3W
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
Subcategory:Transistors
Manufacturer:Central Semiconductor
Mounting TypeThrough Hole
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting Style:Through Hole
Package / Case:TO-39
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Operating Temperature-65В°C ~ 200В°C (TJ)
Frequency - Transition60MHz
Pd - Power Dissipation:800 mW
Supplier Device PackageTO-39
DC Current Gain hFE Max:120
Gain Bandwidth Product fT:60 MHz
Emitter- Base Voltage VEBO:7 V
Collector- Base Voltage VCBO:75 V
Continuous Collector Current:500 mA
Maximum DC Collector Current:500 mA
Vce Saturation (Max) @ Ib, Ic1.5V @ 15mA, 150mA
Current - Collector (Ic) (Max)500mA
Maximum Operating Temperature:+200 C
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:40
Current - Collector Cutoff (Max)10nA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:50 V
Collector-Emitter Saturation Voltage:1.5 V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Voltage - Collector Emitter Breakdown (Max)50V
Factory Pack Quantity: Factory Pack Quantity:500

Техническая документация