2DD1664R-13, Bipolar Transistors - BJT 1000W 32Vceo
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004612904
- Артикул
- 2DD1664R-13
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.75
- Tab
- Tab
- Type
- NPN
- Brand:
- Diodes Incorporated
Цена по запросу
(от 65,16 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.75 |
| Tab | Tab |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | 2DD16 |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Single Dual Collector |
| Manufacturer: | Diodes Incorporated |
| Package Width | 2.6(Max) |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package Height | 1.6(Max) |
| Package Length | 4.6(Max) |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Product Category | Bipolar Power |
| Supplier Package | SOT-89 |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 180@100mA@3V |
| Pd - Power Dissipation: | 1 W |
| Gain Bandwidth Product fT: | 280 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 40 V |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 180 at 100 mA, 3 V |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 280(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 32 V |
| Collector-Emitter Saturation Voltage: | 120 mV |
| Maximum Collector-Emitter Voltage (V) | 32 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@50mA@500mA |