2DB1713-13, Транзистор биполярный BJT 100 нА 12 В 900мВт 270 при 500 мА, 2 В 3 А 180 МГц 120 мВ при 1,5 А, 30 мА PNP -55°C+150°C @(Tj) SOT-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017630646
- Артикул
- 2DB1713-13
- Бренд
- DIODES INC.
- Tab
- Tab
- PPAP
- No
- Type
- PNP
- Brand
- Diodes Incorporated
Цена по запросу
(от 31,74 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 12V 3A 2000 МВт 4-контактный(3+вкладки) SOT-89 T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| Brand | Diodes Incorporated |
| Series | 2DB17 |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape or Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | Transistors |
| Manufacturer | Diodes Incorporated |
| Product Type | BJTs-Bipolar Transistors |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-89-3 |
| Transistor Type | PNP |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | SOT-89 |
| Структура | pnp |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 2500 |
| Standard Package Name | SOT |
| Collector Current (Ic) | 3A |
| Pd - Power Dissipation | 2000 mW |
| Power Dissipation (Pd) | 900mW |
| DC Current Gain HFE Max | 270 |
| Minimum DC Current Gain | 270@500mA@2V |
| Gain Bandwidth Product FT | 180 MHz |
| Transition Frequency (fT) | 180MHz |
| Emitter- Base Voltage VEBO | -6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | -15 V |
| DC Current Gain (hFE@Ic,Vce) | 270@500mA, 2V |
| Maximum DC Collector Current | -6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 270 at 500 mA, 2 V |
| Maximum Power Dissipation (mW) | 2000 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 15 |
| Maximum Transition Frequency (MHz) | 180(Typ) |
| Collector- Emitter Voltage VCEO Max | -12 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | -250 mV |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Collector-Emitter Breakdown Voltage (Vceo) | 12V |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@30mA@1.5A |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 120mV@1.5A, 30mA |
| Граничная частота коэффициента передачи тока fгр.МГц | 180 |