VNS3NV04PTR-E, Gate Drivers OMNIFET II VIPower 35mOhm 12A 40V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004673688
- Артикул
- VNS3NV04PTR-E
- Бренд
- STMicroelectronics
- Type:
- Low-Side
- Brand:
- STMicroelectronics
- Series:
- VNN3NV04P-E
- Product:
- MOSFET Gate Drivers
Цена по запросу
(от 189,75 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | Low-Side |
| Brand: | STMicroelectronics |
| Series: | VNN3NV04P-E |
| Product: | MOSFET Gate Drivers |
| Shutdown: | Yes |
| Fall Time: | 250 ns |
| Rise Time: | 250 ns |
| Вес, г | 0.1246 |
| Technology: | Si |
| Subcategory: | PMIC-Power Management ICs |
| Manufacturer: | STMicroelectronics |
| Package/Case: | SOIC-8 |
| Product Type: | Gate Drivers |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Output Current: | 5 A |
| Product Category: | Gate Drivers |
| Number of Drivers: | 2 Driver |
| Number of Outputs: | 2 Output |
| Moisture Sensitive: | Yes |
| Supply Voltage - Max: | 24 V |
| Pd - Power Dissipation: | 8.3 W |
| Operating Supply Current: | 100 uA |
| Maximum Turn-On Delay Time: | 300 ns |
| Maximum Turn-Off Delay Time: | 1350 ns |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Rds On - Drain-Source Resistance: | 120 mOhms |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |