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VEMT2000X01, Phototransistor, 860 nm, 30 °, 2 Pins, SMD

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Код товара
8293822837
Артикул
VEMT2000X01
Бренд
VISHAY INTERTECHNOLOGY INC.
Case
Gull wing
PPAP
Unknown
Type
IR Chip
Width
2.3mm
Цена по запросу
(от 135 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Фототранзисторный ИК-чип Silicon 860nm Автомобильный 2-контактный SMD T/R

Технические параметры

CaseGull wing
PPAPUnknown
TypeIR Chip
Width2.3mm
EU RoHSCompliant
LED lensblack
MaterialSilicon
MountingSurface Mount
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
Pin Count2
AutomotiveYes
Lens ColorBlack
Wavelength790…970nm
Вес, г0.084
LED versionreverse mount
PCB changed2
Part StatusActive
LED diameter1.8mm
ManufacturerVISHAY
Mounting TypeSurface Mount
Viewing Angle±15°
Number of Pins2
Lens Shape TypeDomed
Peak Wavelength860nm
Transistor TypeNPN
Supplier PackageSMD
Collector Current50mA
Number of Channels1
Spectrums DetectedInfrared
Viewing OrientationTop View
Maximum Dark Current100nA
Peak Wavelength (nm)860
Phototransistor TypePhototransistor
Type of photoelementphototransistor
Maximum Light Current9000µA
Standard Package NameSMD
Collector Current (Ic)50mA
Collector Dark Current1nA
Dissipation Power(Max)100mW
Fabrication TechnologyNPN Transistor
Angle of Half Sensitivity30 °
Collector Emitter Voltage20V
Collector-emitter voltage20V
Maximum Dark Current (nA)100
Maximum Light Current (uA)9000
Maximum Wavelength Detected970nm
Minimum Wavelength Detected790nm
Number of Channels per Chip1
Spectral Range of Sensitivity790 → 970 nm
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)100
Wavelength of peak sensitivity860nm
Half Intensity Angle Degrees (°)30
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)20
Maximum Emitter-Collector Voltage (V)7
Maximum Collector-Emitter Saturation Voltage (V)0.4

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