100V 8A, Schottky Diode, 3-Pin TO-277A V8P10-M3/86A
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- Код товара
- 8009931356
- Артикул
- V8P10-M3/86A
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- Case
- SMPC
- PPAP
- No
- Type
- Schottky Diode
Цена по запросу
(от 140 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Серия выпрямителей Шоттки Trench MOS Barrier (TMBS) от Vishay имеет запатентованную конструкцию траншеи.
Технические параметры
| Tab | Tab |
| Case | SMPC |
| PPAP | No |
| Type | Schottky Diode |
| V(F) | 0.582 V |
| Brand | Vishay |
| Type: | Trench MOS Barrier Schottky Rectifier |
| Brand: | Vishay General Semiconductor |
| I(FSM) | 150 A |
| V(RRM) | 100 V |
| EU RoHS | Compliant with Exemption |
| Package | SMPC |
| Mounting | Surface Mount |
| Product: | Schottky Rectifiers |
| T(j) max | 150 °C |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Diode Type | Schottky |
| Lead Shape | Flat |
| Technology | Schottky |
| Tradename: | TMBS |
| Вес, г | 5 |
| Серия | eSMP®, TMBS® |
| PCB changed | 2 |
| Part Status | Active |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Load current | 8A |
| Manufacturer | VISHAY |
| Package Type | TO-277A |
| Subcategory: | Diodes & Rectifiers |
| Корпус | TO-277A |
| Configuration | Single Dual Anode |
| I(F)per diode | 8 A |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | Schottky Diodes & Rectifiers |
| Type of diode | Schottky rectifying |
| Configuration: | Single Dual Anode |
| Rectifier Type | Schottky Rectifier |
| Kind of package | reel, tape |
| Leakage current | 15mA |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-277A-3 |
| Diode Technology | Schottky Barrier |
| Supplier Package | SMPC |
| Product Category: | Schottky Diodes & Rectifiers |
| Termination Style: | Solder Pad |
| Diode Configuration | Single |
| Forward Voltage Max | 680мВ |
| Max. forward voltage | 0.62V |
| Forward Surge Current | 150А |
| If - Forward Current: | 8 A |
| Ir - Reverse Current: | 70 uA |
| Standard Package Name | TO-277A |
| Vf - Forward Voltage: | 680 mV |
| Max. off-state voltage | 100V |
| Average Forward Current | 8А |
| Semiconductor structure | single diode |
| Peak Forward Voltage (V) | 0.68 |
| Peak Reverse Current (uA) | 70 |
| Supplier Temperature Grade | Commercial |
| Number of Elements per Chip | 1 |
| Тип устройства | Диод Шоттки |
| Max. forward impulse current | 150A |
| Maximum Forward Voltage Drop | 680mV |
| Ifsm - Forward Surge Current: | 150 A |
| Maximum DC Reverse Voltage (V) | 100 |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Peak Reverse Repetitive Voltage | 100V |
| Repetitive Peak Reverse Voltage | 100В |
| Тип Монтажа Диода | SMD(Поверхностный Монтаж) |
| Линейка Продукции | V8P10 |
| Maximum Continuous Forward Current | 8A |
| Vrrm - Repetitive Reverse Voltage: | 100 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Peak Reverse Repetitive Voltage (V) | 100 |
| Repetitive Reverse Voltage Vrrm Max | 100V; Forward Current If(AV) |
| Количество Выводов | 3вывод(-ов) |
| Конфигурация диода | Одиночный |
| Стиль Корпуса Диода | TO-277A |
| Peak Non-Repetitive Surge Current (A) | 150 |
| Maximum Continuous Forward Current (A) | 8 |
| Peak Non-Repetitive Forward Surge Current | 150A |
| Кол-во диодов в корпусе | 1 |
| Рабочая температура, °C | 150 |
| Обратный ток утечки, мкА | 70 |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |
| Максимальная Рабочая Температура | 150°C |
| Максимальное прямое напряжение ,В | 0.68 |
| Максимальное обратное напряжение (В) | 100 |
| Максимальный (средний) прямой ток на диод, (А) | 8 |