UMZ1NFHATR, Bipolar Transistors - BJT TRANSISTOR HIGH RELIABILITY
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- Код товара
- 8025542948
- Артикул
- UMZ1NFHATR
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Вес, г
- 0.14
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 8,18 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
50 В 150 МВт 120 при 1 мА, 6 В 150 мА NPN+ PNP биполярные транзисторы SOT-363 - BJT ROHS
Технические параметры
| Brand: | ROHM Semiconductor |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | SOT-563-6 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | UMZ1NFHA |
| Transistor Type | NPN+PNP |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN, PNP |
| Collector Current (Ic) | 150mA |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 150mW |
| Pd - Power Dissipation: | 150 mW |
| DC Current Gain hFE Max: | 560 |
| Transition Frequency (fT) | 180MHz;140MHz |
| Gain Bandwidth Product fT: | 180 MHz, 140 MHz |
| Emitter- Base Voltage VEBO: | 7 V, 6 V |
| DC Current Gain (hFE@Ic,Vce) | 120@1mA, 6V |
| Collector- Base Voltage VCBO: | 60 V |
| Maximum DC Collector Current: | 150 mA |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 120 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 400 mV, 500 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@5mA, 50mA;500mV@5mA, 50mA |