TN2404K-T1-E3, MOSFETs 240V 0.2A 4.0Ohm
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025619570
- Артикул
- TN2404K-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SOT23
- PPAP
- No
- Brand:
- Vishay Semiconductors
- Series
- TN2404K
Цена по запросу
(от 83 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный МОП-транзистор Vishay для поверxностного монтажа - это продукт нового поколения с напряжением сток-исток 240 В и максимальным напряжением затвор-исток 20 В.
Технические параметры
| Case | SOT23 |
| PPAP | No |
| Brand: | Vishay Semiconductors |
| Series | TN2404K |
| EU RoHS | Compliant |
| Series: | TN2 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 16 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 12 ns |
| Technology | TrenchFET® |
| Tradename: | TrenchFET |
| Вес, г | 0.14 |
| Gate charge | 4.87nC |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VISHAY |
| Package Type | TO-236 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Drain current | 0.16A |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | TN2404K-T1 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 0.23W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.87 nC |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 4Ω |
| Drain-source voltage | 240V |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 12 |
| Pd - Power Dissipation: | 360 mW |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 5 ns |
| Maximum Drain Source Voltage | 240 V |
| Typical Turn-Off Delay Time: | 35 ns |
| Id - Continuous Drain Current: | 200 mA |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 360 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 4.87 |
| Typical Gate Charge @ Vgs (nC) | 4.87@10V |
| Forward Transconductance - Min: | 1.6 S |
| Maximum Drain Source Resistance | 4 O |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5 |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Voltage (V) | 240 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.2 |
| Maximum Drain Source Resistance (mOhm) | 4000@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.65 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |