TEMD5010X01, 60V 940nm 430nm~1100nm 2nA -40°C~+100°C SMD,4.2x5mm PhotodIodes ROHS
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- Код товара
- 8017601437
- Артикул
- TEMD5010X01
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- Unknown
- RoHS
- Details
- Type
- Chip
- Brand
- Vishay Semiconductors
Цена по запросу
(от 136,90 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
TEMD5010 от Vishay Semiconductors представляет собой кремниевый контактный фотодиод. Он поставляется в компактныx корпусаx для поверxностного монтажа (SMD), содержащиx микросxему с чувствительной областью 7.
Технические параметры
| PPAP | Unknown |
| RoHS | Details |
| Type | Chip |
| Brand | Vishay Semiconductors |
| Width | 5 mm |
| Height | 1.08 mm |
| Length | 4.2 mm |
| Series | TEMD |
| Product | PIN Photodiodes |
| Mounting | Surface Mount |
| Polarity | Forward |
| ECCN (US) | EAR99 |
| Fall Time | 100 ns |
| Packaging | Reel |
| Pin Count | 4 |
| Rise Time | 100 ns |
| Automotive | Yes |
| Wavelength | 940nm |
| Вес, г | 0.12 |
| PCB changed | 4 |
| Part Status | Active |
| Current Dark | 2nA |
| Dark Current | 2nA (Typ) |
| Manufacturer | Vishay |
| Photocurrent | 55 uA |
| Mounting Type | Surface Mount |
| Diode Material | Si |
| Mounting Style | SMD/SMT |
| Number of Pins | 4 |
| Spectral Range | 430nm~1100nm |
| Peak Wavelength | 940 nm |
| Photodiode Type | PIN |
| Product Category | Photodiodes |
| Supplier Package | SMD |
| Breakdown Voltage | 60V |
| Typical Fall Time | 100ns |
| Typical Rise Time | 100ns |
| Amplifier Function | No |
| DC Reverse Voltage | 60V |
| Spectrums Detected | Infrared, Visible Light |
| Automotive Standard | AEC-Q101 |
| Photodiode Material | Si |
| If - Forward Current | 50 mA |
| Peak Wavelength (nm) | 940 |
| Vf - Forward Voltage | 1 V |
| Vr - Reverse Voltage | 60 V |
| Factory Pack Quantity | 1500 |
| Short Circuit Current | 50µA |
| Standard Package Name | SMD |
| Maximum Fall Time (ns) | 100(Typ) |
| Maximum Rise Time (ns) | 100(Typ) |
| Pd - Power Dissipation | 215 mW |
| Maximum Dark Current (nA) | 30 |
| Maximum Light Current (uA) | 55(Typ) |
| Maximum Forward Voltage (V) | 1.3 |
| Maximum Reverse Voltage (V) | 60 |
| Maximum Wavelength Detected | 1100nm |
| Minimum Wavelength Detected | 430nm |
| Half Intensity Angle Degrees | 65 deg |
| Noise Equivalent Power - NEP | 4E-14 W/sqrt Hz |
| Maximum Operating Temperature | 100в„ѓ |
| Minimum Operating Temperature | -40в„ѓ |
| Maximum Power Dissipation (mW) | 215 |
| Wavelength of Peak Sensitivity | 940nm |
| Maximum Operating Temperature (°C) | 100 |
| Minimum Operating Temperature (°C) | -40 |