STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8030794846
- Артикул
- STGW80V60DF
- Бренд
- STMicroelectronics
- Type
- FS(Field Stop)
- Brand:
- STMicroelectronics
- Series:
- STGW80V60DF
- Mounting
- Through Hole
Цена по запросу
(от 1 460 ₽)
Минимальный заказ: 30 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор с изолированным затвором или IGBT - это силовое полупроводниковое устройство с тремя выводами, отличающееся высокой эффективностью и быстрым переключением.
Технические параметры
| Type | FS(Field Stop) |
| Brand: | STMicroelectronics |
| Series: | STGW80V60DF |
| Mounting | Through Hole |
| Packaging | Rail/Tube |
| Pin Count | 3 |
| Packaging: | Tube |
| Вес, г | 0.14 |
| Technology: | Si |
| Channel Type | N |
| Package Type | TO-247 |
| Rad Hardened | No |
| Subcategory: | IGBTs |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Package/Case: | TO-247-3 |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | IGBT Transistors |
| Collector Current (DC) | 120(A) |
| Collector Current (Ic) | 120A |
| Power Dissipation (Pd) | 469W |
| Pd - Power Dissipation: | 469 W |
| Transistor Configuration | Single |
| Collector-Emitter Voltage | 600(V) |
| Maximum Power Dissipation | 469 W |
| Operating Temperature (Max) | 175C |
| Operating Temperature (Min) | -40C |
| Turn?on Delay Time (Td(on)) | 60ns |
| Maximum Gate Emitter Voltage | ±20V |
| Turn?on Switching Loss (Eon) | 1.8mJ |
| Gate to Emitter Voltage (Max) | '±20(V) |
| Gate-Emitter Leakage Current: | 250 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Total Gate Charge (Qg@Ic,Vge) | 448nC |
| Turn?off Delay Time (Td(off)) | 220ns |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Turn?off Switching Loss (Eoff) | 1mJ |
| Diode Reverse Recovery Time (Trr) | 60ns |
| Maximum Collector Emitter Voltage | 600 V |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Continuous Collector Current Ic Max: | 80 A |
| Maximum Continuous Collector Current | 120 A |
| Operating Temperature Classification | Automotive |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Continuous Collector Current at 25 C: | 120 A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V, 80A |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |