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STGAP2SICS, IC: driver; SiC MOSFET gate driver; SO8-W; 4A; Ch: 1; 1MHz; 3.1?5.5V

STGAP2SICS, IC: driver; SiC MOSFET gate driver; SO8-W; 4A; Ch: 1; 1MHz; 3.1?5.5V

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Код товара
8014889761
Артикул
STGAP2SICS
Бренд
STMicroelectronics
ECCN
EAR99
Type
电源管理
HTSUS
8542.39.0001
Type:
Half-Bridge
Цена по запросу
(от 488,83 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Емкостная связь драйвера затвора 4A 5000 В Об/мин, 1 канал, 8-SO

Технические параметры

ECCNEAR99
Type电源管理
HTSUS8542.39.0001
Type:Half-Bridge
Brand:STMicroelectronics
PackageTube
Series:STGAP2SICS
Product:Isolated Gate Drivers
TopologyGalvanic Isolated
Pin Count8
Fall Time:30 ns
Packaging:Tube
Rise Time:30 ns
TechnologyCapacitive Coupling
Вес, г1
RoHS StatusROHS3 Compliant
Technology:SiC
Package TypeSO-8W
REACH StatusREACH Unaffected
Subcategory:PMIC-Power Management ICs
Manufacturer:STMicroelectronics
Mounting TypeSurface Mount
Product Type:Isolated Gate Drivers
Configuration:Non-Inverting
Package / Case8-SOIC (0.295"", 7.50mm Width)
Approval AgencyUL
Mounting Style:SMD/SMT
Output Current:4 A
Package / Case:SO-8W
Number of Drivers1
Product Category:Isolated Gate Drivers
Number of Channels1
Number of Drivers:1 Driver
Number of Outputs:1 Output
Moisture Sensitive:Yes
Voltage - Isolation5000Vrms
Current - Peak Output4A
Operating Temperature-40В°C ~ 125В°C
Supply Voltage - Max:5.5 V
Supply Voltage - Min:3 V
Rise / Fall Time (Typ)30ns, 30ns
Supplier Device Package8-SO
Voltage - Output Supply3V ~ 5.5V
Propagation Delay - Max:90 ns
Current - Output High, Low4A, 4A
Pulse Width Distortion (Max)20ns
Maximum Operating Temperature:+125 C
Minimum Operating Temperature:-40 C
Moisture Sensitivity Level (MSL)3 (168 Hours)
Propagation Delay tpLH / tpHL (Max)90ns, 90ns
Common Mode Transient Immunity (Min)100V/ns
Factory Pack Quantity: Factory Pack Quantity:800

Техническая документация