SMBJ33A-13-F, Диод: TVS, 600Вт, 36,7В, 11,3А, однонаправленный, SMB, бобина, лента
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- Код товара
- 8017546787
- Артикул
- SMBJ33A-13-F
- Бренд
- DIODES INC.
- Case
- SMB
- ECCN
- EAR99
- Type
- Zener
- HTSUS
- 8541.10.0080
Цена по запросу
(от 40,42 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Диод: TVS, 600Вт, 36,7В, 11,3А, однонаправленный, SMB, бобина, лента Характеристики Категория Диод Тип защитный
Технические параметры
| Case | SMB |
| ECCN | EAR99 |
| Type | Zener |
| HTSUS | 8541.10.0080 |
| Width | 3.94mm |
| Brand: | Diodes Incorporated |
| Series | SMBJ -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | SMBJ |
| Mounting | SMD |
| Pin Count | 2 |
| Polarity: | Unidirectional |
| Вес, г | 0.12 |
| Серия | SMBJ |
| RoHS Status | ROHS3 Compliant |
| Applications | General Purpose |
| Package Type | DO-214AA(SMB) |
| REACH Status | REACH Affected |
| Subcategory: | TVS Diodes/ESD Suppression Diodes |
| Test Current | 1mA |
| Корпус | SMB |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package/Case: | SMB-2 |
| Product Type: | TVS Diodes |
| Type of diode | TVS |
| Direction Type | Uni-Directional |
| Package / Case | DO-214AA, SMB |
| Kind of package | reel, tape |
| Leakage current | 5µA |
| Working Voltage: | 33 V |
| Мощность | 600 |
| Breakdown voltage | 36.7V |
| Clamping Voltage: | 53.3 V |
| Product Category: | ESD Suppressors/TVS Diodes |
| Breakdown Voltage: | 36.7 V |
| Power - Peak Pulse | 600W |
| Termination Style: | SMD/SMT |
| Base Product Number | SMBJ33 -> |
| Diode Configuration | Single |
| Number of Channels: | 1 Channel |
| Полярность | Однонаправленный |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Power Line Protection | No |
| Vf - Forward Voltage: | 3.5 V |
| Max. off-state voltage | 33V |
| Pd - Power Dissipation: | 5 W |
| Semiconductor structure | unidirectional |
| Supplier Device Package | SMB |
| Unidirectional Channels | 1 |
| Maximum Clamping Voltage | 53.3V |
| Ipp - Peak Pulse Current: | 11.3 A |
| Minimum Breakdown Voltage | 36.7V |
| Voltage - Breakdown (Min) | 36.7V |
| Maximum Peak Pulse Current | 11.3A |
| Number of Elements per Chip | 1 |
| Max. forward impulse current | 11.3A |
| Peak Pulse Power Dissipation | 600W |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Voltage - Clamping (Max) @ Ipp | 53.3V |
| Maximum Reverse Leakage Current | 5µA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Reverse Standoff (Typ) | 33V |
| Features of semiconductor devices | glass passivated |
| Maximum Reverse Stand-off Voltage | 33V |
| Current - Peak Pulse (10/1000Вµs) | 11.3A |
| Количество каналов | 1 |
| Pppm - Peak Pulse Power Dissipation: | 600 W |
| Рабочая температура | -55 ~ 150 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Типовое рабочее напряжение | 33 |
| Максимальный импульсный ток | 11.3 |
| Максимальное напряжение фиксации | 53.3 |
| Максимальное обратное напряжение | 33 |
| Минимальное пробивное напряжение | 36.7 |