SMBJ17A-E3/52, Диод: защитный; 600Вт; 19,9В; 21,7А; однонаправленный; SMB
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017546983
- Артикул
- SMBJ17A-E3/52
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SMB
- PPAP
- No
- Width
- 3.94mm
- Brand:
- Vishay General Semiconductor
Цена по запросу
(от 23 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
• Низкопрофильный корпус • Идеально подxодит для автоматизированного размещения • Место соединения стружки с пассивированным стеклом • Доступно в однонаправленном и двунаправленном исполнении
Технические параметры
| Case | SMB |
| PPAP | No |
| Width | 3.94mm |
| Brand: | Vishay General Semiconductor |
| Series: | SMBJ_A |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 2 |
| Polarity: | Unidirectional |
| Automotive | No |
| Lead Shape | J-Lead |
| Technology | TransZorb® |
| Tradename: | TransZorb |
| Вес, г | 0.11 |
| PCB changed | 2 |
| Part Status | Active |
| Manufacturer | VISHAY |
| Package Type | DO-214AA(SMB) |
| Subcategory: | TVS Diodes/ESD Suppression Diodes |
| Test Current | 1mA |
| Configuration | Single |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | TVS Diodes |
| Type of diode | TVS |
| Direction Type | Uni-Directional |
| Kind of package | reel, tape |
| Leakage current | 1µA |
| Package / Case: | DO-214AA-2 |
| Part # Aliases: | SMBJ17D-M3/H SMBJ17D-M3/I |
| Supplier Package | SMB |
| Working Voltage: | 17 V |
| Breakdown voltage | 19.9V |
| Clamping Voltage: | 27.6 V |
| Product Category: | ESD Suppressors/TVS Diodes |
| Test Current (mA) | 1 |
| Breakdown Voltage: | 18.9 V |
| Termination Style: | SMD/SMT |
| Diode Configuration | Single |
| Manufacturer series | SMBJ |
| Number of Channels: | 1 Channel |
| Standard Package Name | DO-214-AA |
| Vf - Forward Voltage: | 3.5 V |
| Max. off-state voltage | 17V |
| Semiconductor structure | unidirectional |
| Maximum Clamping Voltage | 27.6V |
| Ipp - Peak Pulse Current: | 21.7 A |
| Minimum Breakdown Voltage | 18.9V |
| Maximum Peak Pulse Current | 21.7A |
| Supplier Temperature Grade | Commercial |
| Maximum Forward Voltage (V) | 3.5 |
| Number of Elements per Chip | 1 |
| Max. forward impulse current | 21.7A |
| Maximum Clamping Voltage (V) | 27.6 |
| Peak Pulse Power Dissipation | 600W |
| Maximum Operating Temperature | +150 °C |
| Minimum Breakdown Voltage (V) | 18.9 |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature: | +150 C |
| Maximum Peak Pulse Current (A) | 21.7 |
| Maximum Power Dissipation (mW) | 5000@Ta=50C |
| Minimum Operating Temperature: | -55 C |
| Peak Forward Surge Current (A) | 100 |
| Maximum Reverse Leakage Current | 1µA |
| Peak Pulse Power Dissipation (W) | 600 |
| Features of semiconductor devices | glass passivated |
| Maximum Reverse Stand-off Voltage | 17V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Reverse Leakage Current (uA) | 1 |
| Pppm - Peak Pulse Power Dissipation: | 600 W |
| Maximum Reverse Stand-Off Voltage (V) | 17 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |