SIR626DP-T1-RE3, MOSFETs 60V Vds 20V Vgs PowerPAK SO-8
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- Код товара
- 8025598563
- Артикул
- SIR626DP-T1-RE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series
- TrenchFETВ® Gen IV
- FET Type
- N-Channel
- Packaging
- Cut Tape(CT)
Цена по запросу
(от 210 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, N-канальный, 60 В, 100 А, POWERPAK SO; Полярность транзистора: N-канальный; Постоянный ток стока Id: 100 А; Напряжение источника стока Vds: 60 В; Сопротивление включения Rds(on): 0,0014 Ом; Тестовое напряжение Rds(on) Vgs:10 В; Пороговое напряжение Vgs:3.
Технические параметры
| Brand: | Vishay Semiconductors |
| Series | TrenchFETВ® Gen IV |
| FET Type | N-Channel |
| Packaging | Cut Tape(CT) |
| Vgs (Max) | В±20V |
| Fall Time: | 12 ns |
| Rise Time: | 25 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.14 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | Vishay Siliconix |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | PowerPAK-SO-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | PowerPAKВ® SO-8 |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 102 nC |
| Vgs(th) (Max) @ Id | 3.4V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 20A, 10V |
| Pd - Power Dissipation: | 104 W |
| Power Dissipation (Max) | 104W(Tc) |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Typical Turn-On Delay Time: | 19 ns |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 7.5V |
| Typical Turn-Off Delay Time: | 27 ns |
| Drain to Source Voltage (Vdss) | 60V |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 78 S |
| Input Capacitance (Ciss) (Max) @ Vds | 5130pF @ 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Current - Continuous Drain (Id) @ 25В°C | 100A(Tc) |