SIR422DP-T1-GE3, MOSFETs 40V Vds 20V Vgs PowerPAK SO-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025588287
- Артикул
- SIR422DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Fall Time:
- 11 ns
Цена по запросу
(от 120 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 40В 40A 5,0Вт 0,0066Ом PoВтeОмPakSO8
Технические параметры
| Brand: | Vishay Semiconductors |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Fall Time: | 11 ns |
| Rise Time: | 84 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | PowerPAK-SO-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | PowerPAK® SO-8 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SIR422DP-GE3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 20A, 10V |
| Pd - Power Dissipation: | 34.7 W |
| Power Dissipation (Max) | 5W(Ta), 34.7W(Tc) |
| Supplier Device Package | PowerPAK® SO-8 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 19 ns |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Typical Turn-Off Delay Time: | 28 ns |
| Drain to Source Voltage (Vdss) | 40 V |
| Id - Continuous Drain Current: | 20.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 70 S |
| Rds On - Drain-Source Resistance: | 6.6 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 1785 pF @ 20 V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |