SIA519EDJ-T1-GE3, MOSFETs N- & P- Channel 20V MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025457297
- Артикул
- SIA519EDJ-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
- Series:
- SIA
Цена по запросу
(от 77 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N/P-CH 20V 4,5A/3,7A с 6-контактным разъемом PowerPak SC-70 EP T/R
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | SIA |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Fall Time: | 16 ns, 10 ns |
| Rise Time: | 21 ns, 25 ns |
| Tradename: | TrenchFET, PowerPAK |
| Вес, г | 0.14 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SC70-6 |
| Part # Aliases: | SIA519EDJ-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SC-70 EP |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.7 nC, 5.3 nC |
| Process Technology | TrenchFET |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Typical Fall Time (ns) | 16@N Channel|10@P Channel |
| Typical Rise Time (ns) | 12@N Channel|20@P Channel |
| Pd - Power Dissipation: | 7.8 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 10 ns, 20 ns |
| Typical Turn-Off Delay Time: | 12 ns, 20 ns |
| Maximum Gate Resistance (Ohm) | 20@P Channel|7@N Channel |
| Minimum Gate Resistance (Ohm) | 0.2@P Channel|0.7@N Channel |
| Id - Continuous Drain Current: | 4.5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1900 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 7.7@N Channel|10.5@P Channel |
| Forward Transconductance - Min: | 12 S, 7 S |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 105@P Channel|82@N Channel |
| Typical Turn-On Delay Time (ns) | 10@N Channel|20@P Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.75@P Channel|1.95@N Channel |
| Typical Turn-Off Delay Time (ns) | 21@N Channel|25@P Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 40 mOhms, 90 mOhms |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 2@P Channel|0.95@N Channel |
| Maximum Gate Threshold Voltage (V) | 1.4@N Channel|1.3@P Channel |
| Minimum Gate Threshold Voltage (V) | 0.5@P Channel|0.6@N Channel |
| Typical Gate to Source Charge (nC) | 0.75@P Channel|0.85@N Channel |
| Typical Reverse Recovery Time (ns) | 26@P Channel|15@N Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.5@N Channel|3.7@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 350@10V@N Channel|340@10V@P Channel |
| Typical Reverse Recovery Charge (nC) | 13@P Channel|8@N Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 40@4.5V@N Channel|90@4.5V@P Channel |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV, 500 mV |
| Maximum Gate Source Leakage Current (nA) | 90000@N Channel|8000@P Channel |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 15 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.9 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 95@10V@P Channel|50@10V@N Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.7@P Channel|4.5@N Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 65 |