SIA456DJ-T1-GE3 IGBT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8016181818
- Артикул
- SIA456DJ-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.10.00.80
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 164,92 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET; полевой; 200В; 2,6А; Idm: 2А; 12Вт
Технические параметры
| HTS | 8541.10.00.80 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Вес, г | 0.14 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain |
| Package Width | 2.05 |
| Package Height | 0.75 |
| Package Length | 2.05 |
| EDA / CAD Models | SIA456DJ-T1-GE3 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SC-70 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 20|12 |
| Typical Rise Time (ns) | 25|20 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3500 |
| Typical Gate Charge @ 10V (nC) | 9.5 |
| Typical Gate Charge @ Vgs (nC) | 9.5@10V|5@4.5V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 5|10 |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 30|16 |
| Maximum Gate Threshold Voltage (V) | 1.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.6 |
| Typical Input Capacitance @ Vds (pF) | 350@100V |
| Maximum Drain Source Resistance (MOhm) | 1380@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |