SI9435BDY-T1-E3, MOSFET 30V 5.7A 0.042Ohm
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025614402
- Артикул
- SI9435BDY-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SI9
- Fall Time:
- 30 ns
- Rise Time:
- 42 ns
Цена по запросу
(от 74,10 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SI9 |
| Fall Time: | 30 ns |
| Rise Time: | 42 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI9435BDY-E3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 24 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 2.5 W |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-On Delay Time: | 14 ns |
| Typical Turn-Off Delay Time: | 30 ns |
| Id - Continuous Drain Current: | 5.7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 13 S |
| Rds On - Drain-Source Resistance: | 42 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |