SI8483DB-T2-E1, MOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025435047
- Артикул
- SI8483DB-T2-E1
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
- Packaging
- Tape and Reel
Цена по запросу
(от 41,77 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 12V 16A с 6-контактным разъемом Micro Foot T/R
Технические параметры
| PPAP | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Вес, г | 0.14 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain Triple Source |
| Product Category | Power MOSFET |
| Supplier Package | Micro Foot |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | BGA |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 25 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2770 |
| Typical Gate Charge @ 10V (nC) | 43 |
| Typical Gate Charge @ Vgs (nC) | 43@10V|21@4.5V |
| Maximum Gate Source Voltage (V) | ±10 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 12 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Maximum Gate Threshold Voltage (V) | 0.8 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 16 |
| Typical Input Capacitance @ Vds (pF) | 1840@6V |
| Maximum Drain Source Resistance (mOhm) | 26@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |