SI7469DP-T1-GE3, MOSFETs -80V Vds 20V Vgs PowerPAK SO-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025498940
- Артикул
- SI7469DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- Тип
- MOSFET
- EU RoHS
- Compliant
Цена по запросу
(от 290 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 80V 28A с 8-контактным разъемом PowerPak SO EP T/R
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| Тип | MOSFET |
| EU RoHS | Compliant |
| Series: | SI7 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Tradename: | TrenchFET |
| Вес, г | 0.14 |
| PCB changed | 8 |
| Part Status | NRND |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8 |
| Part # Aliases: | SI7469DP-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO EP |
| Описание | P-Channel 80 V 28A(Tc)5.2W(Ta), 83.3W(Tc)Surface Mount PowerPAK® SO-8 |
| Упаковка | 3000 |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 160 nC |
| Process Technology | TrenchFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Емкость, пФ | 4700 |
| Напряжение | пороговое затвора(Vgs th)-3 В |
| Typical Fall Time (ns) | 100|110 |
| Typical Rise Time (ns) | 220|25 |
| Pd - Power Dissipation: | 83 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Способ монтажа | поверхностный(SMT) |
| Id - Continuous Drain Current: | 28 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 5200 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 105 |
| Typical Gate Charge @ Vgs (nC) | 105@10V|55@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 320 |
| Typical Turn-On Delay Time (ns) | 45|15 |
| Тип проводимости | P |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Gate Plateau Voltage (V) | 3.2 |
| Typical Turn-Off Delay Time (ns) | 95|105 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 29 mOhms |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 26 |
| Заряд затвора, нКл | 160 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 16 |
| Typical Reverse Recovery Time (ns) | 55 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 28 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 4700@40V |
| Typical Reverse Recovery Charge (nC) | 110 |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Maximum Drain Source Resistance (mOhm) | 25@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 40 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 5.2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 235@40V |
| Диапазон рабочих температур | -55…+150 °С |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 10.2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 65 |
| Максимальный ток стока (при Ta=25C), А | 28 |
| Максимально допустимое напряжение | затвор-исток(Vgs)±20 В |
| Транспортная упаковка: размер/кол-во | 60*50*50/600 |
| MSL(Уровень чувствительности к влажности) | 1 |