SI7463DP-T1-GE3, MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025482966
- Артикул
- SI7463DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SI7
- Fall Time:
- 100 ns
- Rise Time:
- 25 ns
Цена по запросу
(от 350 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SI7 |
| Fall Time: | 100 ns |
| Rise Time: | 25 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8 |
| Part # Aliases: | SI7463DP-GE3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 121 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 5.4 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 20 ns |
| Typical Turn-Off Delay Time: | 200 ns |
| Id - Continuous Drain Current: | 18.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 50 S |
| Rds On - Drain-Source Resistance: | 9.2 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |