SI7415DN-T1-GE3, MOSFETs -60V Vds 20V Vgs PowerPAK 1212-8
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- Код товара
- 8025602408
- Артикул
- SI7415DN-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.29.00.95
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 170 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Vishay SI7315DN представляет собой двуxканальный P-канальный МОП-транзистор с напряжением сток-исток (Vds), равным -60 В.Напряжение затвор-исток (VGS) равно 20 В.
Технические параметры
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.14 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.05 |
| Package Height | 1.07(Max) |
| Package Length | 3.05 |
| EDA / CAD Models | SI7415DN-T1-GE3 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 |
| Process Technology | TrenchFET |
| Standard Package Name | PowerPAK 1212 |
| Power Dissipation (Pd) | 1.5W |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 12 |
| Total Gate Charge (Qg@Vgs) | 25nC@10V |
| Number of Elements per Chip | 1 |
| Continuous Drain Current (Id) | 3.6A |
| Maximum Power Dissipation (mW) | 1500 |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 22 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.7 |
| Maximum Drain Source Resistance (MOhm) | 65@10V |