SI7116DN-T1-E3, MOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V
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- Код товара
- 8025625767
- Артикул
- SI7116DN-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- SVHC
- Yes
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 150 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 40 В 10,5 А с 8-контактным разъемом PowerPak 1212 EP T/R
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.14 |
| PCB changed | 8 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.05 |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 EP |
| Process Technology | TrenchFET |
| Standard Package Name | PowerPAK 1212 |
| Power Dissipation (Pd) | 1.5W |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 10 |
| Total Gate Charge (Qg@Vgs) | 23nC@4.5V |
| Number of Elements per Chip | 1 |
| Continuous Drain Current (Id) | 10.5A |
| Maximum Power Dissipation (mW) | 1500 |
| Typical Gate Charge @ Vgs (nC) | 15@4.5V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 200 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain-Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 36 |
| Typical Gate to Drain Charge (nC) | 5.1 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 6.7 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 10.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Reverse Recovery Charge (nC) | 26 |
| Maximum Drain-Source Resistance (mOhm) | 7.8@10V |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 6.5@10V|8.3@4.5V |