SI6423DQ-T1-GE3, MOSFETs -12V Vds 8V Vgs TSSOP-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025624045
- Артикул
- SI6423DQ-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SI6
- Fall Time:
- 200 ns
- Rise Time:
- 75 ns
Цена по запросу
(от 200 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SI6 |
| Fall Time: | 200 ns |
| Rise Time: | 75 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSSOP-8 |
| Part # Aliases: | SI6423DQ-GE3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 110 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Power Dissipation (Pd) | 1.5W |
| Pd - Power Dissipation: | 1.5 W |
| Total Gate Charge (Qg@Vgs) | 110nC@5V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 50 ns |
| Input Capacitance (Ciss@Vds) | 18pF@6V |
| Typical Turn-Off Delay Time: | 270 ns |
| Continuous Drain Current (Id) | 9.5A |
| Id - Continuous Drain Current: | 9.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 45 S |
| Rds On - Drain-Source Resistance: | 8.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF@6V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |