SI4850EY-T1-GE3, MOSFETs 60V Vds 20V Vgs SO-8
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- Код товара
- 8025564596
- Артикул
- SI4850EY-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand
- Vishay/Siliconix
- Width
- 4mm
- Series
- SI4
- Fall Time
- 12 ns
Цена по запросу
(от 110 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand | Vishay/Siliconix |
| Width | 4mm |
| Series | SI4 |
| Fall Time | 12 ns |
| Packaging | Cut Tape or Reel |
| Pin Count | 8 |
| Rise Time | 10 ns |
| Tradename | TrenchFET |
| Technology | Si |
| Вес, г | 0.14 |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Vishay |
| Package Type | SOIC |
| Product Type | MOSFET |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SO-8 |
| Part # Aliases | SI4850EY-GE3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 18 nC |
| Number Of Channels | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 3.3 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 3.3 W |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 10 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 25 ns |
| Maximum Drain Source Voltage | 60 V |
| Id - Continuous Drain Current | 8.5 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 25 S |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | 47 mΩ |
| Maximum Continuous Drain Current | 8.5 A |
| Rds On - Drain-Source Resistance | 22 mOhms |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |