SI2328DS-T1-GE3, MOSFETs 100V Vds 20V Vgs SOT-23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025443476
- Артикул
- SI2328DS-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SOT23
- Width
- 1.4mm
- Mounting
- SMD
- Pin Count
- 3
Цена по запросу
(от 47 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | SOT23 |
| Width | 1.4mm |
| Mounting | SMD |
| Pin Count | 3 |
| Вес, г | 0.14 |
| Gate charge | 3.3nC |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VISHAY |
| Package Type | SOT-23 |
| Polarisation | unipolar |
| Drain current | 0.92A |
| Mounting Type | Surface Mount |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Power dissipation | 0.47W |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±20V |
| On-state resistance | 0.25Ω |
| Transistor Material | Si |
| Drain-source voltage | 100V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.25 W |
| Typical Gate Charge @ Vgs | 1.45 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 2.4 Ω |
| Maximum Continuous Drain Current | 1.15 A |