SI2319DS-T1-BE3, MOSFET P-CHANNEL 40-V (D-S)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025638403
- Артикул
- SI2319DS-T1-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 25 ns
- Rise Time:
- 15 ns
- Вес, г
- 0.14
Цена по запросу
(от 70 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 25 ns |
| Rise Time: | 15 ns |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SI2319DS-T1-E3 |
| Development Kit: | 3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11.3 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 750 mW |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7 ns |
| Typical Turn-Off Delay Time: | 25 ns |
| Id - Continuous Drain Current: | 2.3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 82 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |