SI1469DH-T1-BE3, MOSFETs SOT363 P-CH 20V 2.7A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025436021
- Артикул
- SI1469DH-T1-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay
- Fall Time:
- 15 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 48 ns
Цена по запросу
(от 57 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay |
| Fall Time: | 15 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 48 ns |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Part # Aliases: | SI1469DH-T1-E3 SI1469DH-T1-GE3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8.5 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 2.78 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 27 ns |
| Typical Turn-Off Delay Time: | 27 ns |
| Id - Continuous Drain Current: | 2.7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 155 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |