SI1424EDH-T1-BE3, MOSFETs SOT363 N-CH 20V 4A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025659961
- Артикул
- SI1424EDH-T1-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Series:
- SI1
- Fall Time:
- 1.6 ns
- Packaging:
- Reel, Cut Tape
Цена по запросу
(от 27 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Series: | SI1 |
| Fall Time: | 1.6 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 0.3 us |
| Tradename: | TrenchFET |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Part # Aliases: | SI1424EDH-T1-GE3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 1.56 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 0.15 us |
| Typical Turn-Off Delay Time: | 3.8 us |
| Id - Continuous Drain Current: | 4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 33 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |